PART |
Description |
Maker |
IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
|
Ricoh Co., Ltd.
|
VEC2904 |
PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
2SJ594 2SJ594TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
2SJ201O 2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
|
TOSHIBA
|
RD06HHF1 |
Silicon MOSFET Power Transistor 30MHz,6W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 0.1 A, SILICON, SIGNAL DIODE SILICON, PIN DIODE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
RD16HHF1 RD16HHF1-15 |
Silicon MOSFET Power Transistor 30MHz,16W
|
Quanzhou Jinmei Electro... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RD07MVS1B |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
RD07MVS110 |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
FTD2019A |
N-Channel Silicon MOSFET Transistor Load Switching Applications
|
Sanyo Semicon Device
|
RD05MMP111 |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
|
Mitsubishi Electric Semiconductor
|